2sc4656g Panasonic Corporation of North America, 2sc4656g Datasheet
2sc4656g
Manufacturer Part Number
2sc4656g
Description
Small Signal Bipolar Transistors
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SC4656G.pdf
(4 pages)
Transistors
2SC4656G
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1791G
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2007
• High transition frequency f
• Small collector output capacitance (Common base, input open cir-
• SS-Mini type package, allowing downsizing of the equipment
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
cuited) C
and automatic insertion through the tape packing
2. * : Rank classification
ob
Rank
Parameter
Parameter
h
FE
200 to 400
This product complies with the RoHS Directive (EU 2002/95/EC).
*
Q
T
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
P
CBO
I
T
V
V
V
CEO
EBO
a
250 to 500
I
I
stg
C
CE(sat)
C
C
h
CBO
j
CEO
f
CBO
CEO
EBO
= 25°C
FE
T
ob
R
−55 to +125
Rating
I
I
I
V
V
V
I
V
V
C
C
E
C
125
125
CB
CE
CE
CB
CB
50
50
50
= 10 µA, I
= 1 mA, I
= 10 µA, I
= 10 mA, I
5
SJC00393AED
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
B
C
E
Conditions
Unit
B
mW
B
C
E
E
E
mA
= 0
°C
°C
= 0
= 0
V
V
V
= 2 mA
= 1 mA
= 0
= 0
= −2 mA, f = 200 MHz
= 0, f = 1 MHz
■ Package
• Code
• Marking Symbol: AM
• Pin Name
SSMini3-F3
1. Base
2. Emitter
3. Collector
Min
200
50
50
5
0.06
Typ
250
1.5
Max
100
500
0.1
0.3
MHz
Unit
µA
µA
pF
V
V
V
V
1
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2sc4656g Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC4656G Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1791G ■ Features • High transition frequency f T • Small collector output capacitance (Common base, input open cir- cuited • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing ■ ...
Page 2
... This product complies with the RoHS Directive (EU 2002/95/EC). 2SC4656G 140 120 100 120 ( °C ) Ambient temperature T a CE(sat 0.1 = 85° −25°C 25°C 0.01 0 100 Collector current I (mA) ...
Page 3
This product complies with the RoHS Directive (EU 2002/95/EC). SSMini3-F3 +0.05 1.60 − 0.03 +0.05 0.26 − 0. (0.50) (0.50) 1.00 ±0.05 (5°) Unit: mm +0.05 0.13 − 0.02 ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...