2sc4265jctl-e Renesas Electronics Corporation., 2sc4265jctl-e Datasheet - Page 2

• Manufacturer Part Number: 2sc4265jctl-e
• Description: Silicon Npn Epitaxial
• Manufacturer: Renesas Electronics Corporation.

2SC4265
Electrical Characteristics
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector to emitter saturation voltage
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Rev.3.00 Aug 10, 2005 page 2 of 5
Item
Symbol
V
V
V
(BR)CBO
(BR)CEO
Cob
I
I
CE(sat)
h
CBO
EBO
f
FE
T
Min
600
30
20
40
—
—
—
—
Typ
—
—
—
—
—
—
—
—
Max
0.5
1.0
1.5
10
—
—
—
—
MHz
Unit
pF
V
V
V
A
A
I
I
V
V
I
V
V
V
C
C
C
CE
EB
CE
CB
CE
= 10 A, I
= 1 mA, R
= 20 mA, I
= 3 V, I
= 15 V, I
= 10 V, I
= 10 V, I
= 10 V, I
Test conditions
C
E
BE
E
B
C
E
C
= 0
= 0
= 0
= 4 mA
= 0, f = 1 MHz
= 10 mA
= 10 mA
=
(Ta = 25°C)