2sc4264gctr-e Renesas Electronics Corporation., 2sc4264gctr-e Datasheet - Page 2

• Manufacturer Part Number: 2sc4264gctr-e
• Description: Silicon Npn Epitaxial
• Manufacturer: Renesas Electronics Corporation.

2SC4264
Electrical Characteristics
Collector to base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector to emitter saturation voltage
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Rev.3.00 Aug 10, 2005 page 2 of 5
Item
Symbol
V
V
(BR)CBO
Cob
I
I
I
CE(sat)
h
CBO
CEO
EBO
f
FE
T
Min
1.4
20
20
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
Max
0.5
1.0
0.7
1.5
10
—
—
—
Unit
GHz
pF
V
V
A
A
A
I
V
V
V
I
V
V
V
C
C
CB
CE
EB
CE
CB
CE
= 10 A, I
= 10 mA, I
= 3 V, I
= 15 V, I
= 11 V, R
= 10 V, I
= 10 V, I
= 10 V, I
Test conditions
C
E
E
B
C
E
C
= 0
= 0
BE
= 0
= 5 mA
= 0, f = 1MHz
= 5 mA
= 10 mA
=
(Ta = 25°C)