2sc4260ti-tl-e Renesas Electronics Corporation., 2sc4260ti-tl-e Datasheet - Page 3
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2sc4260ti-tl-e
Manufacturer Part Number
2sc4260ti-tl-e
Description
Silicon Npn Epitaxial
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.2SC4260TI-TL-E.pdf
(5 pages)
2SC4260
Main Characteristics
Rev.3.00 Aug 10, 2005 page 3 of 4
120
100
80
60
40
20
25
20
15
10
0
5
4
3
2
1
0
5
0
Maximum Collector Dissipation Curve
1
1
Ambient Temperature Ta (°C)
Conversion Gain, Noise Figure
V
Gain Bandwidth Product vs.
CE
Collector Current I
Supply Voltage V
2
= 5 V
vs. Supply Voltage
Collector Current
50
2
f
f
out
osc
CG
NF
5
= 30 MHz
= 930 MHz (−5 dBm)
10
100
I
f = 900 MHz
CC
C
C
5
= 0.8 mA
20
(mA)
(V)
150
50
10
200
160
120
1.2
1.1
1.0
0.9
0.8
0.7
80
40
25
20
15
10
0
5
0
0.1
1
1
Collector to Base Voltage V
Collector Output Capacitance vs.
Conversion Gain, Noise Figure
V
f = 900 MHz
DC Current Transfer Ratio vs.
V
CC
CE
Collector Current I
Collector Current I
Collector to Base Voltage
0.2
2
2
= 3 V
= 5 V
vs. Collector Current
Collector Current
f
f
out
osc
0.5
= 30 MHz
= 930 MHz (−5 dBm)
5
5
1.0
10
10
C
C
I
f = 1 MHz
E
20
20
(mA)
(mA)
NF
= 0
2
CB
CG
(V)
50
50
5