2sc4215w Galaxy Semi-Conductor Holdings Limited, 2sc4215w Datasheet - Page 2

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2sc4215w

Manufacturer Part Number
2sc4215w
Description
Npn Silicon Epitaxial Planar Transistor
Manufacturer
Galaxy Semi-Conductor Holdings Limited
Datasheet
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-base time constant
Transition frequency
Marking
h
FE
BL
CLASSIFICANTION OF h
TYPICAL CHARACTERISTICS
Document number: BL/SSSTF041
Rev.A
NPN Silicon Epitaxial Planar Transistor
Galaxy Electrical
QR
90-180
FE
Symbol
V
V
V
I
I
h
C
f
CBO
EBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
C
.r
bb
@ Ta=25W unless otherwise specified
Test conditions
I
I
V
V
V
V
V
C
E
I
CB
EB
CE
CE
CE
=100A,I
=100A,I
C
=1mA,I
=4V,I
=4V,I
=6V,I
=6V,I
=6V, I
QO
135-270
E
C
C
C
E
=0
=0
=1mA
B
=1mA
= 1mA
E
C
=0
=0
=0
MIN
40
30
4
40
260
Production specification
2SC4215W
QY
200-400
TYP
550
www.galaxycn.com
MAX
0.1
0.5
200
25
UNIT
V
V
V
A
A
ps
MHz
2

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