2sc4545 Panasonic Corporation of North America, 2sc4545 Datasheet
2sc4545
Manufacturer Part Number
2sc4545
Description
For Medium Output Power Amplification
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SC4545.pdf
(4 pages)
Power Transistors
2SC4545
Silicon NPN epitaxial planar type
For medium output power amplification
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
• Allowing supply with the radial taping
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
2. * : Rank classification
Rank
Parameter
Parameter
h
FE
50 to 100
*
P
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
V
I
P
I
T
V
V
CBO
CEO
EBO
a
CP
I
I
I
C
stg
CE(sat)
BE(sat)
C
C
h
80 to 160
CBO
CEO
EBO
j
f
CBO
CEO
= 25°C
FE
T
ob
Q
−55 to +150
Rating
I
I
V
V
V
V
I
I
V
V
C
C
C
C
150
CB
1.5
1.5
CB
CE
EB
CE
CB
50
40
= 1 mA, I
= 2 mA, I
= 2 A, I
= 2 A, I
5
3
SJD00130BED
= 10 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 20 V, I
= 20 V, I
120 to 220
B
B
R
= 0.2 A
= 0.2 A
E
E
B
C
C
Conditions
Unit
B
E
E
= − 0.5 A, f = 200 MHz
= 0
= 0
= 0
= 1 A
°C
°C
W
V
V
V
A
A
= 0
= 0
= 0, f = 1 MHz
0.65
0.8 C
1.15
0.7
2.5
±0.1
±0.1
±0.2
±0.2
1
Min
7.5
50
40
50
2
±0.2
3
2.5
0.7
1.15
0.5
0.85
1.0
Typ
150
±0.2
35
±0.1
±0.1
±0.1
±0.2
±0.1
0.8 C
MT-3-A1 Package
Max
100
220
1.5
10
1
1
4.5
1: Emitter
2: Collector
3: Base
±0.2
Unit: mm
0.4
MHz
Unit
0.8 C
µA
µA
µA
±0.1
pF
V
V
V
V
1
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2sc4545 Summary of contents
Page 1
... Power Transistors 2SC4545 Silicon NPN epitaxial planar type For medium output power amplification ■ Features • Allowing supply with the radial taping ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current ...
Page 2
... 2.0 Without heat sink 1.6 1.2 0.8 0 120 160 Ambient temperature T (°C) a BE(sat) C 100 = −25° 75°C T 25°C a 0.1 0.01 0.01 0 Collector current I (A) C MHz = 25° ...
Page 3
... Safe operation area 10 Single pulse = 25° 0.1 0.01 0.001 0 100 Collector-emitter voltage V ( −1 10 −4 −3 −2 − Time t (s) SJD00130BED 2SC4545 Without heat sink ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...