2sc4591ds Renesas Electronics Corporation., 2sc4591ds Datasheet - Page 2

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2sc4591ds

Manufacturer Part Number
2sc4591ds
Description
Silicon Npn Epitaxial
Manufacturer
Renesas Electronics Corporation.
Datasheet
2SC4591
Electrical Characteristics
Collector to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Noise figure
Rev.3.00 Aug 10, 2005 page 2 of 4
Item
Symbol
V
(BR)CBO
Cob
I
I
I
h
PG
NF
CBO
CEO
EBO
f
FE
T
Min
9.5
6.5
15
40
12.5
Typ
120
0.8
9.0
1.2
Max
250
1.5
2.5
10
1
1
Unit
GHz
mA
pF
dB
dB
V
A
A
I
V
V
V
V
V
f = 1MHz
V
V
f = 900 MHz
V
f = 900 MHz
C
CB
CE
EB
CE
CB
CE
CE
CE
= 10 A, I
= 1.5 V, I
= 12 V, I
= 9 V, R
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
Test conditions
C
E
C
C
C
E
BE
E
= 0,
C
= 20 mA
= 20 mA
= 20 mA,
= 5 mA,
= 0
= 0
= 0
=
(Ta = 25°C)

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