2sc4116w Galaxy Semi-Conductor Holdings Limited, 2sc4116w Datasheet - Page 2

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2sc4116w

Manufacturer Part Number
2sc4116w
Description
Silicon Epitaxial Planar Transistor
Manufacturer
Galaxy Semi-Conductor Holdings Limited
Datasheet
Parameter
Collector-base breakdown voltage V
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation
voltage
Transition frequency
Collector output capacitance
Range
Marking
BL
CLASSIFICATION OF h
TYPICAL CHARACTERISTICS
Document number: BL/SSSTF038
Rev.A
Silicon Epitaxial Planar Transistor
Rank
Galaxy Electrical
70-140
LO
O
Symbol
V
V
I
I
h
V
f
C
CBO
EBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
ob
FE
@ Ta=25W unless otherwise specified
Test conditions
I
I
I
V
V
V
I
V
V
C
C
E
CE
CB
EB
CE
CE
CB
=100A,I
=100A,I
=1mA,I
=100mA,I
120-240
=5V,I
=60V,I
=6V,I
=10V, I
=10V,I
LY
Y
C
C
B
=0
=2mA
=0
E
E
C
C
E
=0
=0,f=1MHz
=0
=0
= 1mA
B
=10mA
200-400
GR
LG
Production specification
2SC4116W
MIN TYP MAX UNIT
80
60
50
70
5
www.galaxycn.com
0.1
2.0
350-700
700
0.25
0.1
0.1
3.5
BL
LL
2
V
V
V
A
A
V
MHz
pF

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