2sc4111 Panasonic Corporation of North America, 2sc4111 Datasheet - Page 2

• Manufacturer Part Number: 2sc4111
• Description: Silicon Npn Triple Diffusion Planar Type
• Manufacturer: Panasonic Corporation of North America

Power Transistors
2
10000
3000
1000
200
150
100
100
300
100
0.3
0.1
50
30
10
30
10
0
3
1
0.01
Collector to base voltage V
0
1
Ambient temperature Ta ( ˚C )
(1)
(2)
20
0.03
Collector current I
40
T
3
25˚C
V
C
=–25˚C
C
(1) T
(2) With a 100
(3) With a 50
0.1
BE(sat)
P
ob
60
Al heat sink
Al heat sink
C
C
(3)
— V
=Ta
— Ta
0.3
80
10
— I
100˚C
100
CB
1
50
C
100
C
120
30
I
f=1MHz
T
I
E
2mm
( A )
C
C
=0
3
/I
CB
140
=25˚C
2mm
B
=2.8
( V )
160
100
10
1000
0.03
0.01
300
100
100
0.3
0.1
12
10
30
10
30
10
Collector to emitter voltage V
Collector to emitter voltage V
8
6
4
2
0
3
1
0.01
3
1
Area of safe operation (ASO)
0
1
I
I
CP
C
0.03
Collector current I
T
3
2
C
=100˚C
25˚C
I
0.1
10
h
4
C
10ms
FE
–25˚C
— V
— I
0.3
30
Non repetitive pulse
T
6
C
=25˚C
DC
CE
C
100
8
1
C
T
C
I
t=1ms
300
=25˚C
V
( A )
B
0.2A
0.1A
0.7A
0.5A
10
1A
0.05A
3
=2A
CE
CE
CE
=5V
1000
12
10
( V )
( V )
0.03
0.01
100
100
0.3
0.1
0.3
0.1
30
10
30
10
40
35
30
25
20
15
10
Area of safe operation, horizontal operation ASO
Collector to emitter voltage V
3
1
0.01
3
1
0.01
5
0
0
I
CP
200
0.03
0.03
Collector current I
Collector current I
400
V
CE(sat)
0.1
0.1
f=15.75kHz, T
Area of safe operation for
the single pulse load curve
due to discharge in the
high-voltage rectifier tube
during horizontal operation
f
600
T
— I
0.3
0.3
800
— I
C
2SC4111
1000
25˚C
<1mA
C
C
1
1
=25˚C
T
C
C
1200
V
f=0.5MHz
T
C
CE
C
=100˚C
=25˚C
I
( A )
( A )
C
=10V
3
3
/I
–25˚C
1400
CE
B
=2.8
1600
10
10
( V )