2sc4180w Galaxy Semi-Conductor Holdings Limited, 2sc4180w Datasheet - Page 2

• Manufacturer Part Number: 2sc4180w
• Description: 3silicon Epitaxial Planar Transistor
• Manufacturer: Galaxy Semi-Conductor Holdings Limited

Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation
voltage
Transition frequency
Collector output capacitance
Range
Marking
BL
CLASSIFICATION OF h
PACKAGE OUTLINE
Plastic surface mounted package
Document number: BL/SSSTF040
Rev.A
Silicon Epitaxial Planar Transistor
Galaxy Electrical
135-270
D15
Symbol
V
V
V
I
I
h
V
f
C
CBO
EBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
ob
FE
Test conditions
I
I
I
V
V
V
V
I
V
V
C
C
E
C
CB
EB
CE
CE
CE
CB
=100 A,I
=100 A,I
=1mA,I
=10mA,I
200-400
=120V,I
=5V,I
=6V,I
=6V,I
=6V, I
=30V,I
D16
C
C
C
B
E
=0
=1mA
=1mA
=0
B
E
=1mA
C
E
E
=1mA
=0,f=1MHz
=0
=0
=0
Dim
G
A
B
C
D
E
H
K
J
All Dimensions in mm
SOT-323
300-600
D17
1.15
0.15
0.25
0.02
Min
1.8
1.2
2.1
1.0Typical
0.1Typical
Production specification
MIN TYP
120
120
135
100
2SC4180W
5
www.galaxycn.com
1.35
0.35
0.40
Max
2.2
1.4
0.1
2.3
SOT-323
250
450-900
MAX UNIT
900
0.3
0.05
0.05
D18
2.5
2
V
V
V
A
A
V
MHz
pF