2sc4102w Galaxy Semi-Conductor Holdings Limited, 2sc4102w Datasheet - Page 2

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2sc4102w

Manufacturer Part Number
2sc4102w
Description
Silicon Epitaxial Planar Transistor
Manufacturer
Galaxy Semi-Conductor Holdings Limited
Datasheet
Parameter
Collector-base breakdown voltage V
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation
voltage
Transition frequency
Collector output capacitance
Range
Marking
BL
CLASSIFICATION OF h
Document number: BL/SSSTF037
Rev.A
Silicon Epitaxial Planar Transistor
Galaxy Electrical
Rank
Symbol
V
V
I
I
h
V
f
C
CBO
EBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
ob
FE
180-390
Test conditions
I
I
I
V
V
V
I
V
V
C
C
E
CE
CB
EB
CE
CE
CB
=50A,I
=50A,I
=1mA,I
TR
R
=10mA,I
=4V,I
=100V,I
=6V,I
=12V, I
=12V,I
C
C
B
E
C
=0
=2mA
=0
E
=0
=0
C
E
B
=0,f=1MHz
= 2mA,f=100MHz
=0
=1mA
Production specification
2SC4102W
MIN TYP MAX UNIT
120
120
180
5
270-560
www.galaxycn.com
TS
S
140
2.5
560
0.5
0.5
0.5
2
V
V
V
A
A
V
MHz
pF

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