2sc4177w Galaxy Semi-Conductor Holdings Limited, 2sc4177w Datasheet - Page 2

• Manufacturer Part Number: 2sc4177w
• Description: Silicon Epitaxial Planar Transistor
• Manufacturer: Galaxy Semi-Conductor Holdings Limited

Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation
voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Range
Marking
BL
CLASSIFICATION OF h
TYPICAL CHARACTERISTICS
Document number: BL/SSSTF039
Rev.A
Silicon Epitaxial Planar Transistor
Galaxy Electrical
90-180
L4
Symbol
V
V
V
I
I
h
V
V
f
C
CBO
EBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
ob
FE
@ Ta=25℃ unless otherwise specified
Test conditions
I
I
I
V
V
V
I
I
V
V
C
C
E
C
C
CB
EB
CE
CE
CB
=100μA,I
=1mA,I
=100μA,I
=100mA,I
=100mA,I
=5V,I
135-270
=60V,I
=6V,I
=6V, I
=6V,I
L5
C
C
B
E
E
=0
=1mA
=0
E
=0,f=1MHz
=-10mA
E
C
=0
B
B
=0
=0
=10mA
=10mA
200-400
L6
Production specification
MIN TYP
2SC4177W
60
50
90
5
www.galaxycn.com
200
0.15
0.86
3.0
250
300-600
MAX UNIT
600
0.3
1.0
0.1
0.1
L7
2
V
V
V
μA
μA
V
V
MHz
pF