2sc4197ti-tl-e Renesas Electronics Corporation., 2sc4197ti-tl-e Datasheet - Page 2

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2sc4197ti-tl-e

Manufacturer Part Number
2sc4197ti-tl-e
Description
Silicon Npn Epitaxial
Manufacturer
Renesas Electronics Corporation.
Datasheet
2SC4197
Electrical Characteristics
Collector to base breakdown voltage
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector to emitter saturation voltage
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Conversion gain
Noise figure
Rev.3.00 Aug 10, 2005 page 2 of 9
Item
Symbol
V
V
(BR)CBO
Cob
I
I
I
CE(sat)
CG
h
NF
CBO
CEO
EBO
f
FE
T
Min
3.0
25
50
0.85
Typ
3.8
19
8
Max
180
0.1
0.3
0.3
1.3
10
Unit
GHz
pF
dB
dB
V
V
A
A
A
I
V
V
V
I
V
V
V
V
f
f
C
C
f
osc
out
in
CB
CE
EB
CE
CB
CE
CC
= 10 A, I
= 20 mA, I
= 900 MHz
= 30 MHz
= 930 MHz (–5dBm),
= 3 V, I
= 15 V, I
= 13 V, R
= 5 V, I
= 10 V, I
= 5 V, I
= 5 V, I
Test conditions
C
C
C
C
E
E
B
E
= 0
= 5 mA
= 20 mA
= 0.8 mA,
= 0
BE
= 0
= 4 mA
= 0, f = 1MHz
=
(Ta = 25°C)

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