2sc4499l Renesas Electronics Corporation., 2sc4499l Datasheet - Page 2
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2sc4499l
Manufacturer Part Number
2sc4499l
Description
Silicon Npn Triple Diffused
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.2SC4499L.pdf
(8 pages)
2SC4499(L)/(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note:
Electrical Characteristics (Ta = 25°C)
Item
Collector to emitter sustain
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Turn on time
Storage time
Fall time
Note:
2
1. Value at T
1. Pulse test.
C
= 25 C.
Symbol
V
V
I
I
h
h
V
V
t
t
t
CBO
CEO
on
stg
f
FE1
FE2
CEO(sus)
(BR)EBO
CE(sat)
BE(sat)
Min
400
10
—
—
12
5
—
—
—
—
—
Symbol
V
V
V
I
I
P
P
Tj
Tstg
Typ
—
—
—
—
—
—
—
—
—
—
—
C
C(peak)
CBO
CEO
EBO
C
C
*
1
Max
—
—
20
50
—
—
1.0
1.5
1.0
2.0
1.0
Unit
V
V
V
V
A
s
s
s
Ratings
500
400
10
0.5
1.0
0.75
10
150
–55 to +150
Test conditions
I
L = 100 mH
I
V
V
V
V
I
I
I
V
C
E
C
C
C
CB
CE
CE
CE
CC
= 10 mA, I
= 0.1 A, R
= 0.25 A, I
= 0.25 A, I
= 0.5 A, I
= 400 V, I
= 350 V, R
= 5 V, I
= 5 V, I
150 V
C
C
B1
Unit
V
V
V
A
A
W
BE
C
= 0.25 A*
= 0.5 A*
B
B
C
C
E
= –I
= 0
= 0.05 A*
= 0.05 A*
BE
=
= 0
=
B2
= 0.1 A,
1
1
1
1