2sc4046 Renesas Electronics Corporation., 2sc4046 Datasheet - Page 2

• Manufacturer Part Number: 2sc4046
• Description: Silicon Npn Epitaxial
• Manufacturer: Renesas Electronics Corporation.

2SC4046
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Base to emitter voltage
Collector to emitter saturation
voltage
Gain bandwidth product
Collector output capacitance
Note:
Grade
h
2
FE
12
10
1. The 2SC4046 is grouped by h
8
6
4
2
0
Maximum Collector Dissipation Curve
D
250 to 500
Case Temperature T
50
E
400 to 800
Symbol
V
V
V
I
h
V
V
f
Cob
CBO
T
100
FE
(BR)CBO
(BR)CEO
(BR)EBO
BE
CE(sat)
*
C
1
( C)
FE
Min
120
120
5
—
250
—
—
—
—
as follows.
150
Typ
—
—
—
—
—
—
—
350
3.5
Max
—
—
—
10
800
1.0
1.0
—
—
0.01
1.0
0.1
1
DC Operation
T
Collector to emitter Voltage V
Single Pulse
Ta = 25 C
C
Unit
V
V
V
V
V
MHz
pF
= 25 C
A
Area of Safe Operation
(120 V, 0.055 A)
(120 V, 0.05 A)
10
(80 V, 0.1 A)
Test conditions
I
I
I
V
V
I
V
V
C
C
E
C
CB
CE
CE
CB
= 10 A, I
= 10 A, I
= 1 mA, R
= 200 mA, I
= 80 V, I
= 5 V, I
= 10 V, I
= 30 V, f = 1 MHz, I
(25 V, 0.4 A)
(80 V, 0.125 A)
100
C
C
E
E
C
BE
= 10 mA
= 0
= 0
= 0
= 50 mA
B
=
= 20 mA
CE
(V)
1,000
E
= 0