2sc4926yd-tl-e Renesas Electronics Corporation., 2sc4926yd-tl-e Datasheet - Page 2

• Manufacturer Part Number: 2sc4926yd-tl-e
• Description: Silicon Npn Epitaxial
• Manufacturer: Renesas Electronics Corporation.

2SC4926
Electrical Characteristics
Collector to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
S
Power gain
Noise figure
Rev.3.00 Aug 10, 2005 page 2 of 7
21
Parameter
Item
Symbol
V
(BR)CBO
Cob
S
I
I
I
h
PG
NF
CBO
CEO
EBO
f
21
FE
T
2
13.5
Min
8.0
15
50
—
—
—
—
—
—
11.0
16.5
Typ
120
0.6
1.1
—
—
—
—
16
Max
250
1.1
2.0
10
10
—
—
—
—
1
GHz
Unit
mA
dB
pF
dB
dB
V
A
A
I
V
V
V
V
V
f = 1 MHz
V
V
f = 1000 MHz
V
f = 900 MHz
V
f = 900 MHz
C
CB
CE
EB
CE
CB
CE
CE
CE
CE
= 10 A, I
= 1.5 V, I
= 12 V, I
= 8 V, R
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
Test conditions
C
E
C
C
C
C
E
BE
E
= 0,
C
= 20 mA
= 20 mA
= 20 mA,
= 20 mA,
= 5 mA,
= 0
= 0
= 0
=
(Ta = 25°C)