Transistors
2SC4809J
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: August 2003
• High transition frequency f
• Small collector output capacitance (Common base, input open cir-
• SS-Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
h
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Reverse transfer capacitance
(Common emitter)
Collector-base parameter
cuited) C
automatic insertion through the tape packing
FE
ratio
2. * :∆h
*
ob
Parameter
FE
and reverse transfer capacitance (Common emitter) C
Parameter
= h
FE2
/ h
FE1
T
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
r
T
V
bb
P
CBO
I
T
V
V
CEO
EBO
a
∆h
I
stg
C
CE(sat)
C
C
h
C
CBO
' • C
j
f
CEO
EBO
= 25°C
FE
T
ob
rb
FE
C
−55 to +125
Rating
I
I
V
V
h
h
I
V
V
V
V
C
E
C
FE2
FE1
125
125
CB
CE
CB
CB
CB
CB
15
10
50
= 2 mA, I
= 10 µA, I
= 20 mA, I
3
: V
: V
SJC00303AED
= 4 V, I
= 4 V, I
= 4 V, I
= 10 V, I
= 4 V, I
= 4 V, I
CE
CE
= 4 V, I
= 4 V, I
B
E
E
C
E
E
C
Conditions
Unit
B
mW
E
mA
= −5 mA, f = 200 MHz
= −5 mA, f = 31.9 MHz
= 0
= 5 mA
= 0, f = 1 MHz
= 0, f = 1 MHz
°C
°C
= 0
V
V
V
= 4 mA
= 0
C
C
rb
= 5 mA
= 100 µA
Marking Symbol: 1S
0.27
±0.02
5˚
(0.50)(0.50)
1.60
1.00
1
3
0.75
Min
1.4
10
75
3
+0.05
–0.03
±0.05
2
0.45
Typ
1.9
1.4
11
SSMini3-F1 Package
Max
0.12
400
1.6
0.5
2.7
1
+0.03
–0.01
EIAJ: SC-89
1: Base
2: Emitter
3: Collector
Unit : mm
GHz
Unit
µA
pF
pF
ps
V
V
V
1