2sc4332 Renesas Electronics Corporation., 2sc4332 Datasheet

2sc4332

Manufacturer Part Number

2sc4332

Description

Npn Silicon Epitaxial Transistor For High-speed Switching

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.2SC4332.pdf (5 pages)

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Document No. D16430EJ3V0DS00 (3rd edition)

Date Published July 2006 NS CP(K)

Printed in Japan

for high-speed switching and feature a very low collector-to-emitter

saturation voltage.

converters, motor drivers, solenoid drivers, and other low-voltage power

supply devices, as well as for high-current switching.

FEATURES

• Low collector saturation voltage

• Fast switching speed:

• High DC current gain

ABSOLUTE MAXIMUM RATINGS (T

Notes 1. PW ≤ 10 ms, duty cycle ≤ 50%

Collector to Base Voltage

Collector to Emitter Voltage

Base to Emitter Voltage

Collector Current (DC)

Collector Current (pulse)

Base Current (DC)

Total Power Dissipation

Junction Temperature

Storage Temperature

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

The 2SC4332 and 2SC4332-Z are mold power transistors developed

This transistor is ideal for use in switching regulators, DC/DC

CE(sat)

≤ 0.3

2. Printing board mounted

3. 7.5 cm

= 0.3 V MAX. (I

s MAX. (I

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

x 0.7 mm, ceramic board mounted

= 3.0 A)

= 3.0 A / I

NPN SILICON EPITAXIAL TRANSISTOR

C(pulse)

FOR HIGH-SPEED SWITCHING

C(DC)

B(DC)

CBO

CEO

EBO

= 25°C)

stg

Note1

= 0.15 A)

The mark <R> shows major revised points.

= 25°C)

DATA SHEET

1.0

−55 to +150

Note2

100

150

7.0

5.0

2.5

, 2.0

Note3

SILICON POWER TRANSISTOR

2SC4332,4332-Z

°C

<R>

PACKAGE DRAWINGS (Unit: mm)

2.3 ±0.3

1.1 ±0.2

Note The depth of notch at the top of the fin is

TO-251 (MP-3)

TO-252 (MP-3Z)

6.5 ±0.2

5.0 ±0.2

2.3

6.5 ±0.2

5.0 ±0.2

4.4 ±0.2

1 2 3

from 0 to 0.2 mm.

2.3

2.3 ±0.3

Note

0.5 ±0.1

2.3 ±0.2

ELECTRODE CONNECTION

1. Base

2. Collector

3. Emitter

4. Collector Fin

2.3 ±0.2

0.5 ±0.1

0.15 ±0.15

0.5 ±0.1

Note

2002

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2sc4332 Summary of contents

Page 1

... NPN SILICON EPITAXIAL TRANSISTOR The 2SC4332 and 2SC4332-Z are mold power transistors developed for high-speed switching and feature a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching. ...

Page 2

... 16.7 Ω 3 − 0. Refer to the test circuit 200 to 400 Base current waveform Collector current waveform Data Sheet D16430EJ3V0DS 2SC4332,4332-Z MIN. TYP. MAX. Unit μ 1.0 mA μ 1.0 mA μ 100 100 ...

Page 3

... TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 100 10 1 0.1 1m 10m 100m 100 ( CURRENT GAIN vs. COLLECTOR CURRENT (V) CE Data Sheet D16430EJ3V0DS 2SC4332,4332-Z DERATING CURVE OF SAFE OPERATING AREA Case Temperature T (° 125°C/W th(j- 8.33°C/W th(j- 25°C C Single pulse 1 10 ...

Page 4

... COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT Collector Current I OUTPUT CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Collector to Base Voltage V 4 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT (A) C STORAGE TIME AND FALL TIME vs. COLLECTOR CURRENT (V) CB Data Sheet D16430EJ3V0DS 2SC4332,4332-Z Collector Current I (A) C Collector Current I (A) C ...

Page 5

... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SC4332,4332-Z Not all M8E 02. 11-1 ...

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