2sc4331 Renesas Electronics Corporation., 2sc4331 Datasheet

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2sc4331

Manufacturer Part Number
2sc4331
Description
Silicon Power Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.2SC4331.pdf (5 pages)

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Document No. D16136EJ3V0DS00 (3rd edition)
Date Published January 2007 NS CP(K)
Printed in Japan
high-speed switching and features a very low collector-to-emitter saturation
voltage.
motor drivers, solenoid drivers, and other low-voltage power supply devices,
as well as for high-current switching.
FEATURES
• Available for high-current control in small dimension
• Z type is a lead-processed product and is deal for mounting a hybrid IC.
• Low collector saturation voltage
• Fast switching speed:
• High DC current gain and excellent linearity
ABSOLUTE MAXIMUM RATINGS (T
Notes 1. PW ≤ 10 ms, duty cycle ≤ 50%
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current (DC)
Total Power Dissipation (T
Total Power Dissipation (T
Junction Temperature
Storage Temperature
The 2SC4331 and 2SC4331-Z are mold power transistors developed for
This transistor is ideal for use in switching regulators, DC/DC converters,
V
t
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
f
CE(sat)
≤ 0.4
2. Printing board mounted
3. 7.5 cm
= 0.3 V MAX. (I
μ
s MAX. (I
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
2
× 0.7 mm, ceramic board mounted
C
= 3.0 A)
Note 1
C
A
C
= 25°C)
= 25°C)
= 3.0 A)
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
I
V
I
C(pulse)
I
V
V
The mark <R> shows major revised points.
C(DC)
B(DC)
P
P
T
T
CBO
CEO
EBO
stg
T1
T2
j
A
= 25°C)
1.0
DATA SHEET
−55 to +150
Note 2
150
100
150
7.0
5.0
2.5
10
15
, 2.0
Note 3
°C
°C
W
W
V
V
V
A
A
A
SILICON POWER TRANSISTOR
2SC4331,4331-Z
<R>
PACKAGE DRAWING (Unit: mm)
1.1 ±0.2
2.3 ±0.3
Note The depth of notch at the top of the fin is
TO-252 (MP-3Z)
TO-251 (MP-3)
from 0 to 0.2 mm.
1
6.5 ±0.2
5.0 ±0.2
2.3
6.5 ±0.2
5.0 ±0.2
4.4 ±0.2
1 2 3
2
2.3
4
3
4
2.3 ±0.3
Note
0.5 ±0.1
2.3 ±0.2
2.3 ±0.2
Electrode Connectio
1. Base
2. Collector
3. Emitter
4. Collector Fin
0.5 ±0.1
0.15 ±0.15
0.5 ±0.1
0.5 ±0.1
Note
2002

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2sc4331 Summary of contents

Page 1

... NPN SILICON EPITAXIAL TRANSISTOR The 2SC4331 and 2SC4331-Z are mold power transistors developed for high-speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching ...

Page 2

... 3 Ω −I ≅ 0. Refer to the test circuit 200 to 400 Base current waveform Collector current waveform Data Sheet D16136EJ3V0DS 2SC4331,4331-Z MIN. TYP. MAX. Unit 100 V 100 V μ 1.0 mA μ 1.0 mA μ 100 ...

Page 3

... TYPICAL CHARACTERISTICS (T A With infinite heatsink Ceramic board mounted, 2 × 0.7 mm 7.5 cm Ambient Temperature T Collector to Emitter Voltage V Pulse test Collector to Emitter Voltage V = 25°C) Case Temperature T (°C) A Single pulse (V) CE Collector Current I (V) CE Data Sheet D16136EJ3V0DS 2SC4331,4331-Z (°C) C Pulse Width PW (s) Pulse test ( ...

Page 4

... Pulse test Collector Current I ( Data Sheet D16136EJ3V0DS 2SC4331,4331-Z ...

Page 5

... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SC4331,4331-Z M8E 02. 11-1 ...

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