2sc4359 Panasonic Corporation of North America, 2sc4359 Datasheet
2sc4359
Manufacturer Part Number
2sc4359
Description
Bipolar Power Transistors
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SC4359.pdf
(3 pages)
Power Transistors
2SC4359
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: July 2004
• High-speed switching
• High collector-base voltage (Emitter open) V
• Wide safe oeration area
• Satisfactory linearity of forward current transfer ratio h
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Base current
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Parameter
Parameter
T
a
= 25°C
C
Symbol
V
V
V
V
= 25°C ± 2°C
Symbol
T
V
V
I
P
CBO
I
I
T
V
CEO
EBO
C
CES
CP
I
I
stg
h
h
B
C
CE(sat)
BE(sat)
C
CBO
t
j
EBO
t
f
CEO
FE1
FE2
stg
t
on
= 25°C
T
f
−55 to +150
CBO
Rating
I
V
V
V
V
I
I
V
I
I
V
C
C
C
C
B1
900
900
800
150
CB
EB
CE
CE
CE
CC
3.0
70
= 10 mA, I
= 0.8 A, I
= 0.8 A, I
= 0.8 A
7
1
3
5
= 0.16 A, I
SJD00317AED
= 7 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 900 V, I
= 250 V
FE
B
B
C
C
C
C
Conditions
Unit
B
= 0.16 A
= 0.16 A
= 0
= 0.1 A
= 0.8 A
= 0.15 A, f = 1 MHz
°C
°C
B2
W
V
V
V
V
A
A
A
E
= 0
= 0
= − 0.32 A
1
15.0
11.0
10.9
Min
800
8
6
2
±0.3
±0.2
±0.5
3
5.45
1.1
Typ
2.0
10
φ 3.2
±0.3
±0.1
±0.2
±0.1
TOP-3F-A1 Package
Max
0.6
1.2
0.7
2.5
0.3
50
50
5.0
EIAJ: SC-92
1: Base
2: Collector
3: Emitter
±0.2
Unit: mm
0.6
(3.2)
MHz
Unit
2.0
µA
µA
±0.2
µs
µs
µs
V
V
V
±0.1
1
Related parts for 2sc4359
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Silicon Pnp Epitaxial Planer Transistor
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Npn Epitaxial Planer Transistor
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Pnp Epitaxial Planer Transistor
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Pnp Epitaxial Planer Transistor
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Pnp Npn Epitaxial Planer Transistor
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Npn Epitaxial Planer Transistor
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Epitaxial Planar Type
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Epitaxial Planar Type
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Variable Output, Low Voltage Operation Shunt Regulator Ic
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Ccd Monochrome Video Camera Signal Processor Ic
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Ccd Video Camera Signal Processor Ics
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Epitaxial Planar Type
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Epitaxial Planar Type
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Switching Diodes
Manufacturer:
Panasonic Corporation of North America
Datasheet:
Part Number:
Description:
Silicon Epitaxial Planar Type
Manufacturer:
Panasonic Corporation of North America
Datasheet:
2sc4359 Summary of contents
Page 1
... Power Transistors 2SC4359 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features • High-speed switching • High collector-base voltage (Emitter open) V • Wide safe oeration area • Satisfactory linearity of forward current transfer ratio h ■ Absolute Maximum Ratings T ...
Page 2
... ( (2) With a 100 × 100 × heat sink (3) Without heat sink 100 125 150 ( °C ) Ambient temperature Safe operation area 100 = 25°C Non repetitive pulse ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...