2sc4391 Panasonic Corporation of North America, 2sc4391 Datasheet
2sc4391
Manufacturer Part Number
2sc4391
Description
Silicon Npn Epitaxial Planer Type For Low-frequency Output Amplification
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SC4391.pdf
(3 pages)
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Transistors
2SC4391
Silicon NPN epitaxial planar type
For low-frequency output amplification
Complementary to 2SA1674
■ Features
■ Absolute Maximum Ratings T
Note) * : Copper plate at the collector is more than 1 cm
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
• Low collector-emitter saturation voltage V
• High collector-emitter voltage (Base open) V
• Allowing supply with the radial taping
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
2. * 1: Pulse measurement
* 2: Rank classification
Rank
Parameter
h
Parameter
FE1
120 to 240
*
R
* 1
* 1
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
V
h
h
I
P
CBO
I
T
V
V
V
CEO
EBO
a
CP
170 to 340
I
stg
FE1
FE2
C
CE(sat)
BE(sat)
C
C
CBO
j
f
CBO
CEO
EBO
= 25°C
T
ob
2
* 2
* 1
S
in area, 1.7 mm in thickness
CE(sat)
−55 to +150
CEO
Rating
I
I
I
V
V
V
I
I
V
V
C
C
E
C
C
150
CB
CE
CE
CB
CB
1.5
80
80
= 10 µA, I
= 1 mA, I
= 10 µA, I
= 500 mA, I
= 500 mA, I
5
1
1
SJC00154BED
= 2 V, I
= 2 V, I
= 40 V, I
= 10 V, I
= 10 V, I
B
C
C
C
E
Conditions
Unit
E
E
E
= 0
= 100 mA
= 500 mA
°C
°C
W
= 0
= 0
B
B
V
V
V
A
A
= 0
= −50 mA, f = 200 MHz
= 0, f = 1 MHz
= 50 mA
= 50 mA
0.65 max.
0.45
2.5
0.7
+0.10
–0.05
±0.5
1
Min
6.9
120
4.0
80
80
60
5
2
±0.1
3
2.5
0.15
0.85
Typ
120
10
±0.5
1.05
MT-2-A1 Package
Max
0.30
1.20
±0.05
340
0.1
20
1: Emitter
2: Collector
3: Base
Unit: mm
0.45
2.5
MHz
(0.8)
Unit
µA
pF
V
V
V
V
V
+0.10
–0.05
±0.1
1
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2sc4391 Summary of contents
Page 1
... Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 ■ Features • Low collector-emitter saturation voltage V • High collector-emitter voltage (Base open) V • Allowing supply with the radial taping ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open) ...
Page 2
... 1.2 Copper plate at the collector 2 is more than area, 1 thickness 1.0 0.8 0.6 0.4 0 120 160 ( °C ) Ambient temperature T a BE(sat −25°C 25° 0.1 100°C 0.01 0.001 0.01 0 Collector current ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...