2sc4710ls Sanyo Semiconductor Corporation, 2sc4710ls Datasheet

no-image

2sc4710ls

Manufacturer Part Number
2sc4710ls
Description
Npn Triple Diffused Planar Silicon Transistor
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SC4710LS
Manufacturer:
SANYO
Quantity:
5 000
Part Number:
2SC4710LS
Manufacturer:
SANYO/三洋
Quantity:
20 000
Company:
Part Number:
2SC4710LS
Quantity:
27 601
Ordering number : ENN3688B
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
High breakdown voltage(V CEO min=2100V).
Small Cob(typical Cob=1.3pF).
Wide ASO.
High reliability(Adoption of HVP process).
Full isolation package.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
Symbol
Symbol
V CBO
V CEO
V EBO
I CBO
I EBO
Tstg
h FE
I CP
P C
I C
Tj
f T
V CB =2100V, I E =0
V EB =4V, I C =0
V CE =5V, I C =500 A
V CE =10V, I C =500 A
2100V / 10mA High-Voltage Amplifier,
High-Voltage Switching Applications
2SC4710LS
11502 TS IM TA-3427 / 12099 HA (KT) / 73094 MT (KOTO) 8-7338
Conditions
Package Dimensions
unit : mm
2079D
Conditions
NPN Triple Diffused Planar Silicon Transistor
2.55
1 2 3
10.0
0.9
0.75
1.2
2.55
3.2
[2SC4710LS]
min
10
4.5
2SC4710LS
0.7
Ratings
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220FI(LS)
1.2
2.8
typ
Ratings
6
Continued on next page.
--55 to +150
max
2100
2100
150
60
10
30
5
2
1
1
No.3688-1/3
MHz
Unit
Unit
mA
mA
W
V
V
V
C
C
A
A

Related parts for 2sc4710ls

2sc4710ls Summary of contents

Page 1

... Tstg Symbol Conditions I CBO V CB =2100V EBO V EB =4V =5V =500 =10V =500 A 11502 TS IM TA-3427 / 12099 HA (KT) / 73094 MT (KOTO) 8-7338 2SC4710LS [2SC4710LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0 Base 2 : Collector 3 : Emitter 2.55 SANYO : TO-220FI(LS) Ratings ...

Page 2

... Collector Current 2SC4710LS Symbol Conditions V CE (sat =1mA =200 (sat =1mA =200 A V (BR)CBO (BR)CEO I C =100 (BR)EBO Cob V CB =100V, f=1MHz ...

Page 3

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2002. Specifications and information herein are subject to change without notice. 2SC4710LS =10V 7 5 ...

Related keywords