2sc3835g Inchange Semiconductor Company, 2sc3835g Datasheet

2sc3835g

Manufacturer Part Number

2sc3835g

Description

Isc Silicon Npn Power Transistor

Manufacturer

Inchange Semiconductor Company

Datasheet

1.2SC3835G.pdf (3 pages)

Current page: 1 of 3
Download datasheet (280Kb)

INCHANGE Semiconductor

isc

DESCRIPTION

·Low Collector Saturation Voltage

·Collector-Emitter Breakdown Voltage-

·Good Linearity of h

APPLICATIONS

·Designed for use in humidifier , DC/DC converter and

ABSOLUTE MAXIMUM RATINGS(T

isc Website：www.iscsemi.cn

SYMBOL

: V

general purpose applications

CBO

CEO

EBO

stg

CE(sat)

(BR)CEO

Silicon NPN Power Transistor

= 0.5V(Max)@ I

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Pulse

Base Current-Continuous

Collector Power Dissipation

@ T

Junction Temperature

Storage Temperature Range

= 120V (Min)

=25℃

PARAMETER

=3A

=25

℃)

-55~150

VALUE

200

120

150

UNIT

℃

isc

Product Specification

2SC3835G

Related parts for 2sc3835g

2sc3835g Summary of contents

Page 1

... C I Collector Current-Pulse CM I Base Current-Continuous B B Collector Power Dissipation =25℃ Junction Temperature J Storage Temperature Range T stg isc Website：www.iscsemi.cn =25 ℃) a VALUE UNIT 200 V 120 ℃ 150 ℃ -55~150 isc Product Specification 2SC3835G ...

Page 2

... 8V -0. 12V =10V;f =1.0MHz E CB test =0.3A -0. 16.7Ω 50V 2SC3835G MIN TYP. MAX UNIT 120 V 0.5 V 1.2 V μA 100 μA 100 160 220 30 MHz 110 pF μs 0.5 μs 3.0 μs 0.5 ...

Page 3

... INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Website：www.iscsemi.cn isc Product Specification 2SC3835G ...

Related keywords

2sc3835g datasheet
2sc3835g data sheet
2sc3835g pdf datasheet
2sc3835g component
2sc3835g part
2sc3835g distributor
2sc3835g RoHS
2sc3835g datasheet download