2sc3930w Galaxy Semi-Conductor Holdings Limited, 2sc3930w Datasheet
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2sc3930w
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2sc3930w Summary of contents
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... CEO Emitter-Base Voltage V EBO Collector Current -Continuous I C Collector Dissipation P C Junction and Storage Temperature stg Document number: BL/SSSTF036 Rev Lead-free Marking VB/VC Production specification 2SC3930W SOT-323 Package Code SOT-323 Value Units 150 mW -55~150 ℃ www.galaxycn.com 1 ...
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... V =10V 1mA f=10.7MHz NF V =10V,I =1mA,f=5MHz =10V,I =1mA,f=2MHz 70-140 @ Ta=25℃ unless otherwise specified Production specification 2SC3930W MIN TYP MAX UNIT 0.1 μA 0.1 μA 70 220 150 MHz 1 Ω VC 110-220 www ...
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... BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor Document number: BL/SSSTF036 Rev.A Production specification 2SC3930W www.galaxycn.com 3 ...
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... NPN Silicon Epitaxial Planar Transistor PACKAGE OUTLINE Plastic surface mounted package PACKAGE INFORMATION Device Package 2SC3930W SOT-323 Document number: BL/SSSTF036 Rev.A Dim All Dimensions in mm Shipping 3000/Tape&Reel Production specification 2SC3930W SOT-323 SOT-323 Min Max 1.8 2.2 1.15 1.35 1.0Typical 0.15 0.35 0.25 0.40 1.2 1.4 0.02 0.1 0.1Typical 2.1 2.3 www.galaxycn.com 4 ...