2sc3935g Panasonic Corporation of North America, 2sc3935g Datasheet
2sc3935g
Manufacturer Part Number
2sc3935g
Description
Small Signal Bipolar Transistors
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SC3935G.pdf
(4 pages)
Transistors
2SC3935G
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2007
• High transition frequency f
• Small collector output capacitance (Common base, input open cir-
• S-Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
h
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Reverse transfer capacitance
(Common base)
Collector-base parameter
cuited) C
automatic insertion through the tape packing
FE
ratio
2. * 1: Rank classification
* 2: ∆h
ob
Rank
Parameter
Parameter
h
and reverse transfer capacitance (Common base) C
FE
FE
= h
FE2
/ h
FE1
This product complies with the RoHS Directive (EU 2002/95/EC).
75 to 130
T
P
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
r
T
∆h
V
h
bb
P
CBO
I
T
V
V
CEO
EBO
a
110 to 220
I
I
stg
h
C
FE1
CE(sat)
C
C
C
CBO
' • C
j
CEO
f
CEO
EBO
FE2
FE
= 25°C
T
ob
rb
* 1
* 2
Q
C
−55 to +150
Rating
I
I
V
V
V
V
h
h
I
V
V
V
V
C
E
C
FE2
FE1
150
150
CB
CB
CE
CE
CE
CB
CB
CB
15
10
50
= 2 mA, I
= 10 µA, I
= 20 mA, I
3
: V
: V
SJC00361AED
= 2.4 V, I
= 10 V, I
= 2.4 V, I
= 2.4 V, I
= 4 V, I
= 10 V, I
= 4 V, I
= 4 V, I
CE
CE
= 2.4 V, I
= 2.4 V, I
B
E
E
E
C
Conditions
E
Unit
B
mW
B
E
mA
= −5 mA, f = 31.9 MHz
= 0
C
C
= 0, f = 1 MHz
= 0, f = 1 MHz
°C
°C
= 0
= −7.2 mA, f = 200 MHz
V
V
V
= 4 mA
= 0
= 0
= 7.2 mA
= 100 µA
rb
C
C
= 100 µA
= 7.2 mA
■ Package
• Code
• Marking Symbol: 1S
• Pin Name
SMini3-F2
1. Base
2. Emitter
3. Collector
0.75
Min
1.4
10
75
75
3
0.25
11.8
Typ
1.9
0.9
Max
1.60
0.35
13.5
220
0.5
2.5
1.1
10
1
GHz
Unit
µA
µA
pF
pF
ps
V
V
V
1
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2sc3935g Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC3935G Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing ■ Features • High transition frequency f T • Small collector output capacitance (Common base, input open cir- cuited) C and reverse transfer capacitance (Common base • ...
Page 2
... This product complies with the RoHS Directive (EU 2002/95/EC). 2SC3935G 200 160 120 120 160 ( °C ) Ambient temperature T a CE(sat) C 100 = 75° 25°C 0.1 −25°C 0.01 0 100 ( mA ) Collector current I C ...
Page 3
This product complies with the RoHS Directive (EU 2002/95/EC). SMini3-F2 2.00 ±0.20 +0.05 0.30 − 0. (0.65) (0.65) 1.30 ±0.10 (5°) Unit: mm +0.05 0.13 − 0.02 ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...