2sc3978 Panasonic Corporation of North America, 2sc3978 Datasheet - Page 2

• Manufacturer Part Number: 2sc3978
• Description: Silicon Npn Triple Diffusion Planar Type For High Breakdown Voltage High-speed Switching
• Manufacturer: Panasonic Corporation of North America

Power Transistors
2
1000
100
300
100
0.3
0.1
60
50
40
30
20
10
30
10
30
10
0
3
1
0.01
3
1
Collector to base voltage V
0
1
Ambient temperature Ta ( ˚C )
(1)
(2)
(3)
25˚C
20
0.03
Collector current I
T
C
=–25˚C
40
3
V
C
(1) T
(2) With a 100
(3) With a 50
(4) Without heat sink
0.1
BE(sat)
P
ob
60
100˚C
Al heat sink
Al heat sink
(P
C
C
— V
=Ta
C
— Ta
=2W)
0.3
80
10
(4)
— I
100
CB
1
50
C
100
C
120
30
I
f=1MHz
T
E
2mm
( A )
C
I
=0
3
C
CB
140
=25˚C
2mm
/I
B
=5
( V )
160
100
10
1000
0.03
0.01
300
100
100
3.0
2.5
2.0
1.5
1.0
0.5
0.3
0.1
30
10
30
10
Collector to emitter voltage V
0
3
1
0.01
3
1
0
0
25˚C
0.03
Collector current I
Collector current I
2
T
C
t
0.4
on
=100˚C
I
0.1
, t
h
4
C
FE
–25˚C
stg
— V
, t
— I
0.3
0.8
6
f
I
— I
B
CE
Pulsed t
Duty cycle=1%
I
(2I
V
T
=500mA
C
C
C
CC
/I
B1
=25˚C
B
8
1
=200V
=5
=–I
C
C
C
t
t
1.2
stg
t
T
f
on
400mA
50mA
B2
C
w
200mA
100mA
300mA
=25˚C
V
( A )
( A )
=1ms
10
)
3
CE
CE
=5V
1.6
12
10
( V )
0.003
0.001
0.03
0.01
0.03
0.01
100
100
0.3
0.1
0.3
0.1
0.3
0.1
30
10
30
10
10
Area of safe operation (ASO)
Collector to emitter voltage V
2SC3978, 2SC3978A
3
1
0.01
3
1
0.01
3
1
1
T
C
I
I
CP
C
=100˚C
0.03
0.03
–25˚C
Collector current I
Collector current I
3
V
10ms
CE(sat)
0.1
0.1
10
f
T
— I
25˚C
0.3
0.3
DC
30
Non repetitive pulse
T
— I
C
=25˚C
C
100
C
1
1
t=1ms
C
C
V
f=1MHz
T
C
CE
300
=25˚C
( A )
( A )
I
3
3
C
=10V
/I
CE
B
=5
1000
10
10
( V )