2sc3929a Panasonic Corporation of North America, 2sc3929a Datasheet
2sc3929a
Manufacturer Part Number
2sc3929a
Description
Silicon Npn Epitaxial Planer Type For Low-frequency Output Amplification
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SC3929A.pdf
(4 pages)
Transistors
2SC3929, 2SC3929A
Silicon NPN epitaxial planar type
For low-frequency output amplification
Complementary to 2SA1531 and 2SA1531A
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
• Low noise voltage NV
• High forward current transfer ratio h
• S-Mini type package, allowing downsizing of the equipment and
Collector-base voltage
(Emitter open)
Collector-emitter voltage 2SC3929
(Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Noise voltage
automatic insertion through the tape packing
2. * : Rank classification
Marking
symbol
Parameter
Parameter
Rank
h
FE
2SC3929
2SC3929A
2SC3929
2SC3929A
2SC3929A
2SC3929
2SC3929A
2SC3929
2SC3929A
*
180 to 360
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
FE
TR
SR
T
V
I
P
R
CBO
I
T
V
V
V
CEO
EBO
a
CP
I
I
stg
V
C
CE(sat)
NV
C
h
CBO
j
CEO
f
CBO
CEO
EBO
= 25°C
FE
BE
T
−55 to +150
Rating
I
I
I
V
V
V
V
I
V
V
R
C
C
E
C
100
150
150
g
CE
CB
CE
CE
CB
CE
260 to 520
35
55
35
55
50
= 10 µA, I
= 2 mA, I
= 10 µA, I
= 100 mA, I
5
= 100 kΩ, Function = FLAT
SJC00140CED
= 1 V, I
= 10 V, I
= 5 V, I
= 10 V, I
= 10 V, I
= 5 V, I
SS
TS
S
B
C
C
E
C
E
Conditions
Unit
mW
B
C
E
mA
mA
= 0
= 2 mA
= 100 mA
= −2 mA, f = 200 MHz
°C
°C
= 0
= 0
B
V
V
V
= 0
= 0
= 1 mA, G
= 10 mA
360 to 700
ST
TT
T
V
= 80 dB
Marking Symbol:
10˚
0.3
(0.65) (0.65)
+0.1
–0.0
• 2SC3929: S
• 2SC3929A: T
1
3
1.3
2.0
±0.1
±0.2
Min
180
35
55
35
55
5
2
Typ
100
0.7
SMini3-G1 Package
Max
700
150
1.0
0.1
0.6
1
0.15
EIAJ: SC-70
1: Base
2: Emitter
3: Collector
+0.10
–0.05
Unit: mm
MHz
Unit
mV
µA
µA
V
V
V
V
V
1
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2sc3929a Summary of contents
Page 1
... SJC00140CED +0.10 +0.1 0.15 0.3 –0.05 –0 (0.65) (0.65) 1.3 ±0.1 2.0 ±0.2 10˚ 1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package Marking Symbol: • 2SC3929: S • 2SC3929A: T Min Typ Max 0.7 1.0 0.1 1 180 700 0.6 100 = 80 dB 150 V Unit: mm Unit µA µA V ...
Page 2
... 240 200 160 120 120 160 ( °C ) Ambient temperature T a 120 = 25°C CE 100 = 75°C −25° 0.4 0.8 1.2 1.6 2 Base-emitter voltage V BE 500 = 25° ...
Page 3
... Function = RIAA 240 180 = 120 0 0 100 ( kΩ ) Signal source resistance R g SJC00140CED 2SC3929, 2SC3929A NV 300 = Function = RIAA 240 180 120 = 100 kΩ kΩ 60 4.7 kΩ 0 0.01 0.1 ...
Page 4
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...