2sc3356-t1b Renesas Electronics Corporation., 2sc3356-t1b Datasheet

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2sc3356-t1b

Manufacturer Part Number
2sc3356-t1b
Description
Npn Silicon Rf Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No. PU10209EJ02V0DS (2nd edition)
Date Published June 2004 CP(K)
Printed in Japan
FEATURES
• Low noise and high gain : NF = 1.1 dB TYP., G
• High power gain : MAG = 13 dB TYP. @ V
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
2SC3356
2SC3356-T1B
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Remark To order evaluation samples, contact your nearby sales office.
Note Free air
Part Number
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
The unit sample quantity is 50 pcs.
Parameter
FOR MICROWAVE LOW-NOISE AMPLIFICATION
50 pcs (Non reel)
3 kpcs/reel
NPN EPITAXIAL SILICON RF TRANSISTOR
Quantity
Symbol
P
V
V
V
T
tot
CBO
CEO
I
T
The mark
EBO
stg
C
Note
j
A
= +25°C)
CE
DATA SHEET
3-PIN MINIMOLD
= 10 V, I
• 8 mm wide embossed taping
• Pin 3 (Collector) face the perforation side of the tape
a
= 11 dB TYP. @ V
shows major revised points.
−65 to +150
Ratings
C
100
200
150
3.0
20
12
= 20 mA, f = 1 GHz
NPN SILICON RF TRANSISTOR
CE
= 10 V, I
Unit
mW
mA
°C
°C
V
V
V
Supplying Form
C
= 7 mA, f = 1 GHz
NEC Compound Semiconductor Devices, Ltd.1985, 2004
2SC3356

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2sc3356-t1b Summary of contents

Page 1

... Low noise and high gain : NF = 1.1 dB TYP., G • High power gain : MAG = 13 dB TYP ORDERING INFORMATION Part Number Quantity 2SC3356 50 pcs (Non reel) 2SC3356-T1B 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (T Parameter Collector to Base Voltage ...

Page 2

... mA GHz CE C Note mA MHz CB E µ s, Duty Cycle ≤ 2% Note Note R25/S R24 R25 125 to 250 Data Sheet PU10209EJ02V0DS 2SC3356 MIN. TYP. MAX. Unit µ – – 1.0 A µ – – 1 120 250 – ...

Page 3

... A GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 0.5 0.2 0 0.5 Data Sheet PU10209EJ02V0DS 2SC3356 MHz 0 Collector to Base Voltage V ( 100 Collector Current I (mA) C INSERTION POWER GAIN vs. COLLECTOR CURRENT GHz ...

Page 4

... Microwave] → [Device Parameters] URL http://www.ncsd.necel.com/ 4 NOISE FIGURE, INSERTION POWER GAIN vs. COLLECTOR TO EMITTER VOLTAGE 21e Collector to Emitter Voltage V Data Sheet PU10209EJ02V0DS 2SC3356 GHz (V) CE ...

Page 5

... CONDITION : 120˚ 60˚ 30˚ 150˚ 0˚ 180˚ –30˚ –150˚ –60˚ –120˚ Data Sheet PU10209EJ02V0DS 2SC3356 90˚ 2.0 GHz 60˚ S 12e 30˚ 0.2 GHz 0˚ 0.05 0.1 0.15 0.2 0.25 –30˚ –60˚ –90˚ ...

Page 6

... PACKAGE DIMENSIONS 3-PIN MINIMOLD (UNIT: mm) 6 2.8±0.2 +0.1 1.5 0.65 –0. Marking PIN CONNECTIONS 1. Emitter 2. Base 3. Collector Data Sheet PU10209EJ02V0DS 2SC3356 ...

Page 7

... NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Please check with an NEC sales representative for Data Sheet PU10209EJ02V0DS 2SC3356 The M8E 00 0110 7 ...

Page 8

... TEL: +886-2-8712-0478 Taipei Branch Office TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 http://www.ncsd.necel.com/ FAX: +852-3107-7309 FAX: +886-2-2545-3859 FAX: +82-2-558-5209 2SC3356 0406 ...

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