2sc3513 Renesas Electronics Corporation., 2sc3513 Datasheet - Page 2

• Manufacturer Part Number: 2sc3513
• Description: Silicon Npn Epitaxial
• Manufacturer: Renesas Electronics Corporation.

2SC3513
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
Collector cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Noise figure
Note: Marking is “IS–”.
2
Symbol
V
I
I
I
h
Cob
f
PG
NF
CEO
EBO
CBO
T
FE
(BR)CBO
Min
15
—
—
—
50
—
—
—
—
Symbol
V
V
V
I
P
Tj
Tstg
C
Typ
—
—
—
—
120
1.0
6.0
10
1.6
CBO
CEO
EBO
C
Max
—
1
1
1
250
1.5
—
—
—
Unit
V
pF
GHz
dB
dB
Ratings
15
11
2
50
150
150
–55 to +150
A
A
A
Test conditions
I
V
V
V
V
V
V
V
f = 900 MHz
V
f = 900 MHz
C
CE
EB
CB
CE
CB
CE
CE
CE
= 10 A, I
= 10 V, R
= 1 V, I
= 12 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
C
C
E
C
C
C
Unit
V
V
V
mA
mW
E
E
C
C
= 0, f = 1 MHz
= 0
= 20 mA
= 20 mA
= 20 mA,
= 5 mA,
BE
= 0
= 0
=