2sc3587 Renesas Electronics Corporation., 2sc3587 Datasheet
2sc3587
Related parts for 2sc3587
2sc3587 Summary of contents
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... NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. FEATURES Low noise : ...
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... To test 1 GHz or lower, insert a bandpass filter 150 200 0.1 0.2 200 f = 1.0 MHz 100 0 2SC3587 Mixer NF Meter * MAG AND INSERTION GAIN vs. FREQUENCY MAG 21e 0 Frequency - GHz DC CURRENT GAIN vs. COLLECTOR CURRENT ...
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... 13.209 120.8 .0288 8.371 95.7 .0424 5.672 78.7 .0561 4.304 66.9 .0697 3.456 58.6 .0848 3.095 46.1 .0955 2.595 35.0 .106 2.231 27.6 .127 2SC3587 GHz GHz 50.9 .634 -25.0 54.2 .610 -29.4 54.5 .579 -33.5 54.1 .549 -38.7 51.9 .531 -46.2 48.0 .507 -52.8 43.2 ...
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... GHz 4 GHz S 22e 0.5 GHz - FREQUENCY 500 MHz Step 120 60 150 30 0 180 150 60 120 2SC3587 500 MHz Step 500 MHz Step GHz 30 0.5 GHz 0 0.05 0 ...
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... [MEMO] 2SC3587 5 ...
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... [MEMO] 6 2SC3587 ...
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... [MEMO] 2SC3587 7 ...
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... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. 6 2SC3587 M4 96.5 ...