2sc3569 Renesas Electronics Corporation., 2sc3569 Datasheet

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2sc3569

Manufacturer Part Number
2sc3569
Description
Npn Silicon Triple Diffused Transistor For High-voltage High-speed Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
Document No. D16187EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
voltage high-speed switching, and is ideal for use in drivers such as
switching regulators, DC/DC converters, and high-frequency power
amplifiers.
FEATURES
• Mold package that does not require an insulating board or
• Low collector saturation voltage:
• Fast switching speed:
• Wide base reverse-bias SOA:
ABSOLUTE MAXIMUM RATINGS (Ta = 25° ° ° ° C)
* PW ≤ 300 µ s, duty cycle ≤ 10%
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
insulation bushing
V
t
V
f
The 2SC3569 is a mold power transistor developed for high-
CE(sat)
CEX(SUS)
≤ 1.0 µ s MAX. (@ 0.7 A)
Parameter
= 1.0 V MAX. (@ 0.7 A)
= 450 V MIN. (@ 0.5 A)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
NPN SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
P
P
T
T
(Tc = 25°C)
(Ta = 25°C)
Symbol
I
C(pulse)
V
V
I
V
I
C(DC)
B(DC)
T
T
CBO
CEO
EBO
stg
j
*
−55 to +150
Ratings
500
400
150
7.0
2.0
4.0
1.0
2.0
15
DATA SHEET
Unit
°C
°C
W
W
V
V
V
A
A
A
SILICON POWER TRANSISTOR
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
2SC3569
©
1998
2002

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2sc3569 Summary of contents

Page 1

... NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC3569 is a mold power transistor developed for high- voltage high-speed switching, and is ideal for use in drivers such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FEATURES • Mold package that does not require an insulating board or insulation bushing • ...

Page 2

... 214 Ω −I ≅ 150 ° C) Collector to Emitter Voltage V C Data Sheet D16187EJ1V0DS 2SC3569 MIN. TYP. MAX. Unit 400 V 450 V 400 V µ 1.0 mA µ 1.0 mA µ 1 ...

Page 3

... C) Case Temperature T C Collector to Emitter Voltage V (V) CE Collector Current I (mA) C Data Sheet D16187EJ1V0DS 2SC3569 Ta = 25°C (without heatsink) (with infinite heatsink) Pulse Width PW (s) Collector to Emitter Voltage V (V) CE Collector Current I (mA ...

Page 4

... Collector Current I ( Base current waveform Collector current waveform Data Sheet D16187EJ1V0DS 2SC3569 ...

Page 5

... Data Sheet D16187EJ1V0DS 2SC3569 5 ...

Page 6

... NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Please check with an NEC sales representative for 2SC3569 The M8E 00. 4 ...

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