2n7002esept Chenmko Enterprise Co. Ltd., 2n7002esept Datasheet - Page 2

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2n7002esept

Manufacturer Part Number
2n7002esept
Description
Surface Mount N-channel Enhancement Mode Field Effect Transistor
Manufacturer
Chenmko Enterprise Co. Ltd.
Datasheet
Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
g
DYNAMIC CHARACTERISTICS
C
C
C
t
t
DSS
GSSF
GSSR
on
r
FS
Note:
GS(th)
DS(ON)
3. Pulse Test: Pulse Width < 300µs, Duty Cycle < 1.0%.
iss
oss
rss
DSS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
ELECTRICAL CHARACTERISTIC ( 2N7002ESEPT )
(Note 1)
T
(Note 3)
(Note 3)
A
= 25°C unless otherwise noted
(Note 3)
(Note 3)
Conditions
V
V
V
V
V
V
V
V
V
V
I
R
f = 1.0 MHz
D
GS
DS
GS
GS
DS
GS
GS
DS
DS
DD
GEN
= 200 mA , V
= 60 V, V
= -20 V, V
= V
= 10 V , I
= 25 V, V
= 0 V, I
= 20 V, V
= 5 V, I
= 10 V, I
= 30 V, R
= 10
GS
, I
D
D
D
D
= 10 µA
= 250 µA
= 50 mA
GS
DS
D
L
= 500 mA
GS
DS
= 200 m A
= 150
gen
= 0 V
= 0 V
= 0 V,
= 0 V
= 10 V,
,
T
J
=125°C
Min
1.0
60
80
1.85
Typ
25
10
3.0
12
20
Max
0.5
10
-10
50
25
20
30
2.5
7.5
7.5
1
5
Units
mA
mS
µA
uA
uA
nS
pF
V
V

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