2n2222ac1 Semelab Group, 2n2222ac1 Datasheet

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2n2222ac1

Manufacturer Part Number
2n2222ac1
Description
Silicon Planar Epitaxial Npn Transistor
Manufacturer
Semelab Group
Datasheet
SILICON PLANAR
EPITAXIAL NPN TRANSISTOR
2N2222AC1
ABSOLUTE MAXIMUM RATINGS
THERMAL PROPERTIES
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Semelab Limited
Semelab Limited
Semelab Limited
Telephone +44 (0) 1455 556565
V CBO
V CEO
V EBO
I C
P D
T J
T stg
Symbols
R θJA
High Speed Saturated Switching
Hermetic Surface Mounted Package.
Ideally suited for High Speed Switching
and General Purpose Applications
Screening Options Available
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Total Power Dissipation at
Junction Temperature Range
Storage Temperature Range
Parameters
Thermal Resistance, Junction To Ambient
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Fax +44 (0) 1455 552612
(Each Device)
Email:
sales@semelab-tt.com
T A = 25°C
Derate Above 37.5°C
(T A = 25°C unless otherwise stated)
Website:
http://www.semelab-tt.com
Min.
-65 to +200°C
-65 to +200°C
3.08mW/°C
Typ.
500mW
800mA
75V
50V
6V
Max.
Document Number 8359
325
Units
°C/W
Page 1 of 4
Issue 2

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2n2222ac1 Summary of contents

Page 1

... SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1 High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching • and General Purpose Applications Screening Options Available • ABSOLUTE MAXIMUM RATINGS V CBO Collector – Base Voltage V CEO Collector – Emitter Voltage V EBO Emitter – ...

Page 2

... SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1 ELECTRICAL CHARACTERISTICS Symbols Parameters Collector-Emitter (1) V (BR)CEO Breakdown Voltage I CBO Collector Cut-Off Current I EBO Emitter Cut-Off Current I CES Collector Cut-Off Current Collector-Emitter Saturation (1) V CE(sat) Voltage Base-Emitter Saturation (1) V BE(sat) Voltage Forward-current transfer ( ratio ...

Page 3

... SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1 MECHANICAL DATA Dimensions in mm (inches) 0.51 ± 0.10 (0.02 ± 0.004) 2 (0.075 ± 0.004) (0.12 ± 0.005) PACKAGE VARIANT TABLE Variant Pad 1 A Base B Base * The additional contact provides a connection to the lid in the application. Connecting the metal lid to a known electrical potential stops deep dielectric discharge in space applications ...

Page 4

... When Group B,C or LVT is required, additional electrical and mechanical destructive samples must be ordered 3) All destructive samples are marked the same as other production parts unless otherwise requested. Example ordering information: The following example is for the 2N2222AC1 part, package variant B, JQRS screening, additional Group C conformance testing and a Data pack. Part Numbers: 2N2222AC1B-JQRS 2N2222AC1B-JQRS ...

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