si7104dn Vishay, si7104dn Datasheet - Page 2

• Manufacturer Part Number: si7104dn
• Description: N-channel 12-v D-s Mosfet
• Manufacturer: Vishay

Si7104DN
Vishay Siliconix
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 81 °C/W.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
b
a
a
J
a, b
= 25 °C, unless otherwise noted
a
ΔV
Symbol
ΔV
R
V
GS(th)
I
t
t
t
t
I
C
V
I
DS(on)
C
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
d(on)
d(off)
GSS
DSS
DS
Q
g
R
oss
t
t
t
t
DS
rss
iss
fs
gs
gd
r
f
r
f
g
g
/T
/T
J
J
Steady State
V
V
V
I
I
D
V
DS
D
t ≤ 10 s
DS
DS
DS
≅ 10 A, V
≅ 10 A, V
= 6 V, V
= 6 V, V
= 12 V, V
V
V
V
V
V
V
= 6 V, V
V
V
V
V
DS
GS
DS
DS
GS
DS
DS
GS
DD
DD
Test Conditions
= 0 V, V
= V
= 4.5 V, I
= 15 V, I
= 0 V, I
≥ 5 V, V
= 12 V, V
= 2.5 V, I
= 6 V, R
= 6 V, R
I
D
GS
f = 1 MHz
GEN
GS
GEN
GS
= 250 µA
GS
GS
= 4.5 V, I
= 10 V, I
, I
= 4.5 V, R
= 0 V, f = 1 MHz
= 0 V, T
= 10 V, R
D
GS
D
GS
D
Symbol
D
L
L
= 250 µA
GS
D
= 250 µA
R
R
= 26.1 A
= 26.1 A
= 0.6 Ω
= 0.6 Ω
= ± 12 V
= 4.5 V
= 19 A
thJA
thJC
= 0 V
D
D
J
= 26.1 A
= 26.1 A
= 55 °C
g
g
= 1 Ω
= 1 Ω
Typical
1.9
24
Min.
0.6
0.6
12
40
0.0031
0.0057
Maximum
2800
1050
Typ.
- 4.5
520
5.3
5.1
1.2
90
46
23
20
20
33
10
12
11
36
10
8
2.4
33
S-80581-Rev. B, 17-Mar-08
Document Number: 73406
0.0037
± 100
0.007
Max.
1.8
1.8
10
70
35
30
30
50
15
20
20
55
15
1
°C/W
Unit
mV/°C
Unit
nA
µA
pF
nC
ns
Ω
Ω
V
V
A
S