si7129dn Vishay, si7129dn Datasheet - Page 4

• Manufacturer Part Number: si7129dn
• Description: P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Si7129DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
0.1
10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1
0.0
- 50
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
- Source-to-Drain Voltage (V)
J
0.4
Threshold Voltage
= 150 ºC
T
J
25
- Temperature (ºC)
0.6
50
Limited by R
0.01
100
0.1
10
75
1
0.8
T
0.1
J
I
D
= 25 ºC
= 250 µA
Safe Operating Area, Junction-to-Ambient
100
* V
DS(on) *
GS
T
1.0
Single Pulse
A
> minimum V
125
= 25 ºC
V
DS
- Drain-to-Source Voltage (V)
New Product
1.2
150
1
GS
at which R
BVDSS Limited
10
DS(on)
0.04
0.03
0.02
0.01
0.00
is Specified
50
40
30
20
10
0
0.01
0
1 ms
10ms
10 s
100 ms
DC
100 µs
1 s
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
2
10
0.1
4
V
GS
6
- Gate-to-Source Voltage (V)
T
1.0
J
8
= 25 ºC
Time (s)
10
T
S-82576-Rev. A, 27-Oct-08
Document Number: 68966
10
J
12
= 125 ºC
14
100
16
18
1000
20