zvn4306gv Zetex Semiconductors plc., zvn4306gv Datasheet - Page 2

• Manufacturer Part Number: zvn4306gv
• Description: Sot223 N-channel Enhancement Mode Vertical Dmos Fet
• Manufacturer: Zetex Semiconductors plc.

ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source
Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
On-State Drain
Current(1)
Static Drain-Source
On-State Resistance
(1)
Forward
Transconductance (1)
Input Capacitance (2) C
Common Source
Output Capacitance
(2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time
(2)(3)
Rise Time (2)(3)
Turn-Off Delay Time
(2)(3)
Fall Time (2)(3)
ZVN4306GV
SYMBOL MIN.
BV
V
I
I
I
R
g
C
C
t
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
GS(th)
DS(on)
iss
oss
rss
DSS
60
1.3
12
0.7
TYP.
0.22
0.32
amb
MAX.
3
20
10
100
0.33
0.45
350
140
30
8
25
30
16
= 25°C unless otherwise stated).
UNIT CONDITIONS.
V
V
nA
A
S
pF
pF
pF
ns
ns
ns
ns
A
A
I
I
V
V
V
V
V
V
V
V
V
D
D
GS
DS
DS
DS
GS
GS
DS
DS
DD
=1mA, V
=1mA, V
=60V, V
=48V, V
=10V, V
=25V,I
=25 V, V
= 20V, V
=10V, I
=5V, I
25V, V
D
D
GS
=1.5A
DS
D
=3A
GS
GS
GS
=3A
GEN
GS
=0V
= V
DS
=0V
=0V, T=125°C
=10V
=0V, f=1MHz
=10V, I
=0V
GS
D
=3A
(2)