zxmn3f31dn8 Zetex Semiconductors plc., zxmn3f31dn8 Datasheet - Page 4

• Manufacturer Part Number: zxmn3f31dn8
• Description: 30v So8 Dual N-channel Enhancement Mode Mosfet
• Manufacturer: Zetex Semiconductors plc.

Electrical characteristics (at T
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤2%.
(†) For design aid only, not subject to production testing
(‡) Switching characteristics are independent of operating junction temperature.
Issue 2 - February 2008
© Zetex Semiconductors plc 2008
NOTES:
Parameter
Static
Drain-Source breakdown
voltage
Zero Gate voltage drain
current
Gate-Body leakage
Gate-Source threshold
voltage
Static Drain-Source
on-state resistance
Forward
transconductance
Dynamic
Input capacitance
Output capacitance
Reverse transfer
capacitance
Switching
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Diode Forward Voltage
Reverse recovery time
Reverse recovery charge
(†)
(‡)(†)
(*)(†)
(*)
(†)
(*)
(†)
Symbol
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
rr
amb
Min.
= 25°C unless otherwise stated)
1.0
30
4
Typ.
16.5
12.9
2.52
0.82
608
132
2.9
3.3
2.5
4.8
71
16
12
8
0.024
0.039
Max.
100
0.5
3.0
1.2
Unit
μA
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
Ω
V
V
S
V
ZXMN3F31DN8
Conditions
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
T
V
T
di/dt=100A/ s
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G ≅
DS
GS
= 250μA, V
= 250μA, V
= 7A
=25°C, I
=25
= 30V, V
= 15V, I
= 15V, V
= 15V, V
=±20V, V
= 10V, I
= 4.5V, I
= 15V, I
=0V
6.0Ω, V
o
C, I
www.zetex.com
S
S
= 1.7A,
=2.2A
D
D
D
D
GS
GS
GS
GS
= 7A
= 7.0A
= 1A
GS
DS
DS
= 6.0A
=0V
=0V
=10V
= 10V
=0V
=V
=0V
GS