zxmn3g32dn8 Zetex Semiconductors plc., zxmn3g32dn8 Datasheet - Page 2

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zxmn3g32dn8

Manufacturer Part Number
zxmn3g32dn8
Description
30v So8 Dual N-channel Enhancement Mode Mosfet
Manufacturer
Zetex Semiconductors plc.
Datasheet

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Absolute maximum ratings
Thermal resistance
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
(b) For a device surface mounted on FR4 PCB measured at t ≤ 10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300µs - pulse width limited by maximum junction
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
(f) Thermal resistance from junction to solder-point (at end of drain lead).
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
Parameter
Drain source voltage
Gate source voltage
Continous Drain Current @ V
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Operating and storage temperature range
Parameter
Junction to ambient
Junction to ambient
Junction to ambient
Junction to lead
conditions.
temperature.
(f)
(a)(d)
(a)(e)
(b)(d)
(c)
A
A
A
=25°C
=25°C
=25°C
@ V
@ V
GS
GS
GS
(a)(d)
(a)(e)
(b)(d)
=10; T
=10; T
=10; T
(c)
A
A
A
=70°C
=25°C
=25°C
(b)
(b)
(a)
(b)
2
Symbol
Symbol
T
V
R
R
R
R
V
j
I
I
, T
P
P
P
DSS
DM
SM
I
I
GS
D
S
D
D
D
JA
JA
JA
JL
stg
ZXMN3G32DN8
-55 to 150
Limit
Limit
33.6
33.6
1.25
±20
100
7.1
5.7
5.5
3.1
1.8
2.1
30
10
14
17
70
60
51
www.zetex.com
mW/°C
mW/°C
mW/°C
°C/W
°C/W
°C/W
°C/W
Unit
Unit
°C
W
W
W
A
A
A
A
A
A
V
V

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