zxmn6a08k Zetex Semiconductors plc., zxmn6a08k Datasheet - Page 4

• Manufacturer Part Number: zxmn6a08k
• Description: 60v Dpak N-channel Enhancement Mode Mosfet
• Manufacturer: Zetex Semiconductors plc.

Electrical characteristics (at T
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (1) (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING (2) (3)
Turn-On-Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
(1) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
Issue 1 - December 2008
© Diodes Incorporated, 2008
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
g
g
gs
gd
rr
amb
= 25°C unless otherwise stated).
MIN.
60
1
4
TYP.
44.2
24.1
12.3
0.88
19.2
30.3
459
6.6
2.6
2.1
4.6
4.0
5.8
1.4
1.9
MAX.
0.5
100
3
0.080
0.150
0.95
UNIT
nC
nC
nC
nC
nC
μA
nA
pF
pF
pF
ZXMN6A08K
ns
ns
ns
ns
ns
Ω
Ω
V
V
S
V
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CONDITIONS
I D = 250μA, V GS =0V
V DS = 60V, V GS =0V
V GS =±20V, V DS =0V
I D = 250μA, V DS =V GS
V GS = 10V, I D = 4.8A
V GS = 4.5V, I D = 4.2A
V DS = 15V, I D = 4.8A
V DS = 40V, V GS =0V
f=1MHz
V DD = 30V, I D = 1.5A
R G ≅6.0Ω, V GS = 10V
V DS = 30V, V GS = 5V
I D = 1.4A
V DS = 30V, V GS = 10V
I D = 1.4A
T j =25°C, I S = 4A,
V GS =0V
T j =25°C, I S = 1.4A,
di/dt=100A/μs
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