si7848bdp Vishay, si7848bdp Datasheet - Page 4

• Manufacturer Part Number: si7848bdp
• Description: N-channel 40-v D-s Mosfet
• Manufacturer: Vishay

Si7848BDP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
60
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
T
0
J
- Source-to-Drain Voltage (V)
= 150 °C
Threshold Voltage
0.4
I
T
D
J
= 250 µA
25
- Temperature (°C)
0.6
50
75
0.8
0.01
100
0.1
10
100
1
0.1
T
J
= 25 °C
Safe Operating Area, Junction-to-Ambient
* V
1.0
Limited by R
Single Pulse
125
T
GS
A
= 25 °C
V
minimum V
150
1.2
DS
DS(on)
- Drain-to-Source Voltage (V)
1
*
GS
at which R
BVDSS Limited
0.030
0.025
0.020
0.015
0.010
0.005
0.000
10
DS(on)
50
40
30
20
10
0
0.001
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
0.01
100 µs
10 ms
100 ms
1 s
10 s
1 ms
dc
2
V
100
GS
- Gate-to-Source Voltage (V)
0.1
4
Time (s)
S-80440-Rev. B, 03-Mar-08
1
Document Number: 74632
6
125 °C
25 °C
10
I
D
= 18 A
8
100
600
10