si7842dp-t1 Vishay, si7842dp-t1 Datasheet - Page 5

• Manufacturer Part Number: si7842dp-t1
• Description: Dual N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

MOSFET TYPICAL CHARACTERISTICS 25 °C, unless noted
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?71617.
Document Number: 71617
S-52554-Rev. C, 19-Dec-05
0.0001
0.001
0.01
0.1
20
10
1
0.01
0
0.1
2
1
Reverse Current vs. Junction Temperature
10
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
-5
25
30 V
50
T
J
- Temperature (°C)
75
24 V
10
-4
Normalized Thermal Transient Impedance, Junction-to-Case
100
200
160
120
80
40
0
0
125
Square Wave Pulse Duration (sec)
150
V
6
DS
10
- Drain-to-Source Voltage (V)
-3
C
oss
Capacitance
12
18
10
1
10
0.0
-2
24
T
0.3
J
30
= 150 °C
V
Forward Voltage Drop
F
- Forward Voltage Drop (V)
0.6
10
-1
T
Vishay Siliconix
J
= 25 °C
0.9
Si7842DP
www.vishay.com
1.2
1
1.5
5