si7322dn Vishay, si7322dn Datasheet - Page 4

• Manufacturer Part Number: si7322dn
• Description: N-channel 100-v D-s Mosfet
• Manufacturer: Vishay

Si7322DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
3.8
3.4
3.0
2.6
2.2
1.8
10
- 50
1
0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
T
Threshold Voltage
0.4
J
- Temperature (°C)
25
T
J
I
D
= 150 °C
0.6
= 250 µA
50
0.001
75
0.01
100
0.1
10
0.8
1
0.1
Limited by r
T
100
J
= 25 °C
Safe Operating Area, Junction-to-Ambient
* V
1.0
GS
Single Pulse
125
T
A
> minimum V
V
DS(on)
= 25 °C
DS
New Product
150
1.2
- Drain-to-Source Voltage (V)
*
1
GS
at which r
10
DS(on)
0.16
0.12
0.08
0.04
BVDSS
is specified
50
40
30
20
10
0
0.01
0
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
100
0.1
100 us
1 ms
10 ms
100 ms
1 s
10 s
DC
2
V
GS
- Gate-to-Source Voltage (V)
1
4
Time (s)
S-72512-Rev. A, 03-Dec-07
Document Number: 69638
10
6
I
D
T
T
A
= 5.5 A
A
100
= 25 °C
= 125 °C
8
1000
10