si7348dp-t1 Vishay, si7348dp-t1 Datasheet - Page 2

• Manufacturer Part Number: si7348dp-t1
• Description: N-channel 20-v D-s Mosfet
• Manufacturer: Vishay

Si7348DP
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
60
50
40
30
20
10
0
0
b
Parameter
1
V
a
a
DS
Output Characteristics
a
- Drain-to-Source Voltage (V)
2
a
a
J
V
= 25_C UNLESS OTHERWISE NOTED)
GS
= 10 thru 5 V
3
4 V
Symbol
V
r
r
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
3 V
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
4
5
New Product
V
V
I
DS
D
DS
^ 1 A, V
I
= 10 V, V
F
V
= 16 V, V
V
V
V
V
V
V
V
DS
= 2.9 A, di/dt = 100 A/ms
I
DS
DS
V
Test Condition
S
DS
GS
DD
DD
GS
DS
= 3.7 A, V
= 0 V, V
= V
w 5 V, V
= 16 V, V
= 10 V, I
= 10 V, R
= 10 V, R
= 4.5 V, I
= 6 V, I
GEN
GS
GS
GS
, I
= 10 V, R
= 4.5 V, I
GS
= 0 V, T
D
D
GS
GS
GS
= 250 mA
D
D
L
L
= 14 A
= "20 V
= 10 W
= 10 W
= 14 A
= 11 A
= 10 V
= 0 V
= 0 V
J
D
G
= 55_C
60
50
40
30
20
10
= 14 A
= 6 W
0
0
1
V
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
Min
1.0
30
2
0.010
0.016
3
Typ
0.8
5.7
2.2
2.0
1.3
19
17
17
37
30
11
S-03591—Rev. A, 31-Mar-03
T
C
Document Number: 72129
25_C
= -55_C
4
0.0125
"100
Max
0.020
3.0
1.2
8.5
30
30
60
20
60
1
5
125_C
5
Unit
nA
mA
mA
nC
ns
W
W
W
V
A
S
V
6