zxmp3a17e6 Zetex Semiconductors plc., zxmp3a17e6 Datasheet - Page 4
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zxmp3a17e6
Manufacturer Part Number
zxmp3a17e6
Description
30v P-channel Enhancement Mode Mosfet
Manufacturer
Zetex Semiconductors plc.
Datasheet
1.ZXMP3A17E6.pdf
(7 pages)
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ELECTRICAL CHARACTERISTICS
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMP3A17E6
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
S E M I C O N D U C T O R S
(3)
(1)
(2) (3)
(1)
(3)
(3)
(1)(3)
(at T
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
g
gs
gd
rr
A
= 25°C unless otherwise stated).
4
MIN.
-1.0
-30
-0.85
TYP.
1.74
2.87
29.2
8.72
8.28
15.8
1.84
19.5
16.3
630
113
6.4
2.8
78
MAX. UNIT CONDITIONS.
0.070
0.110
ADVANCE INFORMATION
-0.5
100
-1.2
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt= 100A/µs
D
D
D
D
J
J
DS
GS
GS
GS
DS
DS
DD
G
DS
DS
GS
=-3.2A
=-3.2A
=-250 A, V
=-250 A, V
=25°C, I
=25°C, I
≅6.0 , V
=-30V, V
=-15V,I
=-15V, V
=-15V,V
=-15V,V
= 20V, V
=-10V, I
=-4.5V, I
=0V
ISSUE 2 - JUNE 2003
=-15V, I
S
F
D
=-1.7A,
GS
=-2.5A,
D
GS
GS
=-3.2A
D
GS
D
GS
=-3.2A
GS
DS
DS
=-1A
=-2.5A
=-10V
=-5V,
=-10V,
=0V
=0V,
=0V
= V
=0V
GS