sup90n15-18p Vishay, sup90n15-18p Datasheet
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sup90n15-18p
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sup90n15-18p Summary of contents
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... V (V) r (Ω) (BR)DSS DS(on) 0.018 150 GS T O-220AB Ordering Information: SUP90N15-18P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current a Single Avalanche Energy a Maximum Power Dissipation ...
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... SUP90N15-18P Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... T = 125 °C C 0.01 0. 6000 5000 4000 3000 T = 150 °C A 2000 1000 ° SUP90N15-18P Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... SUP90N15-18P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Total Gate Charge (nC) g Gate Charge 0.8 0.2 - 0.4 - 1.0 - 1 Temperature (°C) J Threshold Voltage 100 T = 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage www ...
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... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) SUP90N15-18P Vishay Siliconix 100 125 T - Temperature (°C) J Power Derating*, Junction-to-Case ...
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