bsc106n025s Infineon Technologies Corporation, bsc106n025s Datasheet - Page 6

• Manufacturer Part Number: bsc106n025s
• Description: N-channel Mosfet 20v?300v Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.1
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
20
16
12
4
3
2
DS
=f(T
8
4
0
10000
1000
100
0
10
-60
); V
j
); I
GS
D
=0 V; f =1 MHz
=30 A; V
-10
10
98 %
GS
40
V
Coss
=10 V
T
Ciss
DS
Crss
j
[°C]
typ
[V]
90
20
140
190
page 6
30
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
2.4
1.6
1.2
0.8
0.4
10
10
10
10
=f(T
SD
2
0
3
2
1
0
-60
)
0
j
); V
D
j
GS
-10
=V
0.5
DS
20 µA
150 °C
40
V
T
SD
j
200 µA
[°C]
1
[V]
90
BSC106N025S G
25 °C
1.5
140
150 °C, 98%
25 °C, 98%
2008-04-25
190
2