bsc119n03s Infineon Technologies Corporation, bsc119n03s Datasheet - Page 6

• Manufacturer Part Number: bsc119n03s
• Description: Optimos2 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 1.01
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
20
16
12
4
3
2
1
DS
=f(T
8
4
0
10000
1000
100
0
10
-60
); V
j
); I
GS
D
=0 V; f =1 MHz
-20
=30 A; V
10
20
98 %
GS
V
Coss
Ciss
=10 V
T
DS
Crss
j
typ
60
[°C]
[V]
100
20
140
180
30
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
2.5
1.5
0.5
10
10
10
10
=f(T
SD
2
1
0
-1
3
2
1
0
-60
)
0
j
); V
D
j
-20
GS
=V
0.5
DS
20
20 µA
150 °C
V
T
SD
j
60
[°C]
1
200 µA
25 °C
[V]
25 °C, 98%
BSC119N03S G
100
1.5
150 °C, 98%
140
2004-12-15
180
2