bsc190n12ns3g Infineon Technologies Corporation, bsc190n12ns3g Datasheet
bsc190n12ns3g
Manufacturer Part Number
bsc190n12ns3g
Description
Optimostm3 Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BSC190N12NS3G.pdf
(10 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSC190N12NS3G
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 2.5
1)
Features
• N-channel, normal level
• Excellent gate charge x R
• Very low on-resistance R
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
BSC190N12NS3 G
J-STD20 and JESD22
TM
3 Power-Transistor
3)
j
Package
PG-TDSON-8
=25 °C, unless otherwise specified
DS(on)
DS(on)
1)
product (FOM)
for target application
Symbol Conditions
I
I
E
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Marking
190N12NS
stg
T
T
T
R
T
I
T
D
page 1
C
C
A
C
C
thJA
=39 A, R
=25 °C,
=25 °C
=100 °C
=25 °C
=25 °C
=45 K/W
GS
=25 Ω
2)
Product Summary
V
R
I
D
DS
DS(on),max
-55 ... 150
55/150/56
PG-TDSON-8
Value
176
±20
8.6
44
27
60
69
BSC190N12NS3 G
120
19
44
Unit
A
mJ
V
W
°C
V
mΩ
A
2009-10-30