si4837dy Vishay, si4837dy Datasheet - Page 4

• Manufacturer Part Number: si4837dy
• Description: P-channel 30-v D-s Mosfet With Schottky Diode
• Manufacturer: Vishay

Si4837DY
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
–0.2
–0.4
0.8
0.6
0.4
0.2
0.0
50
10
0.01
1
0.00
–50
0.1
2
1
10
–4
Source-Drain Diode Forward Voltage
–25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.25
V
T
SD
J
= 150_C
0
– Source-to-Drain Voltage (V)
T
Threshold Voltage
0.50
I
J
D
– Temperature (_C)
= 250 mA
10
25
–3
0.75
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
T
1.00
J
= 25_C
10
100
–2
1.25
125
Square Wave Pulse Duration (sec)
New Product
1.50
150
10
–1
0.070
0.056
0.042
0.028
0.014
0.000
1
200
160
120
80
40
0
0.001
0
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Gate-to-Source Voltage
V
2
GS
0.01
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
– Gate-to-Source Voltage (V)
DM
JM
– T
A
4
t
Time (sec)
1
= P
t
2
DM
0.1
Z
thJA
thJA
I
D
100
S-04246—Rev. A, 16-Jul-01
Document Number: 71662
6
t
t
(t)
= 8.3 A
1
2
= 70_C/W
1
MOSFET
8
600
10
10