bsc059n03sg Infineon Technologies Corporation, bsc059n03sg Datasheet
bsc059n03sg
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bsc059n03sg Summary of contents
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OptiMOS ® 2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified according to JEDEC1 for target applications • Logic level / N-channel • Excellent gate charge x RDS(on) product (FOM) • ...
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Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 1) ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...
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Power dissipation P =f(T ) tot Safe operating area I =f =25 ° parameter 1000 limited ...
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Typ. output characteristics I =f =25 ° parameter 120 10 V 4.5 V 100 Typ. transfer characteristics I =f |>2|I |R ...
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Drain-source on-state resistance =10 V DS(on -60 - Typ. capacitances C =f ...
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Avalanche characteristics =25 Ω parameter: T j(start) 100 125 °C 100 ° Drain-source breakdown voltage V =f BR(DSS ...
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Package Outline PG-TDSON-8: Outline Rev. 1.53 PG-TDSON-8 page 8 BSC059N03S G 2008-04-28 ...
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Package Outline PG-TDSON-8: Tape Dimensions in mm Rev. 1.53 page 9 BSC059N03S G 2008-04-28 ...
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Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...